1 05/19/03 supertex inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." supertex does not assume responsibility for use of devices described and limits its liabi lity to the replacement of devices determined to be defective due to workmanship. no responsibility is assumed for possible omissions or inaccuracies. circuitry and specifications are subject to c hange without notice. for the latest product specifications, refer to the supertex website: http://www.supertex.com. for complete liability information on all supertex products, refer to the most curre nt databook or to the legal/disclaimer page on the supertex website. VP0350 advanced dmos technology these enhancement-mode (normally-off) transistors utilize a vertical dmos structure and supertex? well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertex? vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. note: see package outline section for dimensions. p-channel enhancement-mode v ertical dmos fets package options high reliability devices see pages 5-4 and 5-5 for military standard process flows and ordering information. absolute maximum ratings drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. applications ? motor controls ? converters ? amplifiers ? switches ? power supply circuits ? drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) features ? free from secondary breakdown ? low power drive requirement ? ease of paralleling ? low c iss and fast switching speeds ? excellent thermal stability ? integral source-drain diode ? high input impedance and high gain ? complementary n- and p-channel devices bv dss /r ds(on) i d(on) bv dgs (max) (min) to-3 to-220 die ? -500v 7.5 ? -1a VP0350n1 VP0350n5 VP0350nd ? mil visual screening available order number / package ordering information to-3 g s case: drain t o-220 t ab: drain g d s C obsolete C
2 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v v dd r gen 0v -10v symbol parameter min typ max unit conditions bv dss drain-to-source breakdown voltage -500 v v gs = 0v, i d =-10ma v gs(th) gate threshold voltage -2.5 -4.5 v v gs = v ds , i d = -10ma ? v gs(th) change in v gs(th) with temperature 4.8 6.0 mv/ cv gs = v ds , i d = -10ma i gss gate body leakage -100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current -200 av gs = 0v, v ds = max rating v gs = 0v, v ds = 0.8 max rating t a = 125 c i d(on) on-state drain current -1.5 v gs = -5v, v ds = -25v -1.0 -3.0 v gs = -10v, v ds = -25v r ds(on) 6.0 v gs = -5v, i d = -0.25a 5.5 7.5 v gs = -10v, i d = -0.25a ? r ds(on) change in r ds(on) with temperature 0.7 1.2 %/ cv gs = -10v, i d = -0.25a g fs forward transconductance 0.25 0.45 v ds = -25v, i d = -0.5a c iss input capacitance 720 800 c oss common source output capacitance 110 130 pf c rss reverse transfer capacitance 20 50 t d(on) turn-on delay time 11 30 t r rise time 11 30 t d(off) turn-off delay time 70 100 t f fall time 22 30 v sd diode forward voltage drop -1.0 -1.3 v v gs = 0v, i sd = -0.25a t rr reverse recovery time 550 ns v gs = 0v, i sd = -0.25a notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. VP0350 switching waveforms and test circuit package i d (continuous)* i d (pulsed) power dissipation jc ja i dr *i drm @ t c = 25 c c/w c/w to-3 -1.5a -3.0a 100w 1.25 30 -1.5a -3.0a to-220 -1.0a -3.0a 50w 2.5 40 -1.0a -3.0a * i d (continuous) is limited by max rated t j . electrical characteristics (@ 25 c unless otherwise specified) thermal characteristics a -2 ma v gs = 0v, v ds = -25v f = 1 mhz static drain-to-source on-state resistance v dd = -25v ns i d = -1a r gen = 10 ? ? ? C obsolete C
3 t ypical performance curves VP0350 output characteristics -5 -4 -3 -2 -1 0 -10 -20 -30 -50 -40 saturation characteristics 0-2-4- 6 -10 -8 maximum rated safe operating area -1 -1000 -100 -10 -0.1 -1 -10 -0.01 thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 transconductance vs. drain current 1.0 0.8 0.6 0.4 0.2 power dissipation vs. case temperature 0 150 100 50 100 80 60 40 20 125 75 25 -2.0 -1.6 -1.2 -0.8 -0.4 to-220 to-3 to-220 p d = 50w t c = 25 c 10 0.001 0.01 0.1 1 to-220 (dc) to-3 (dc) to-220 (pulsed) t a = -55 c a v ds = -25v t a = 25 c t a = 150 c 0 -2.5 -0.5 -1.0 -1.5 -2.0 v gs = -10v -6v -4v 0 v gs = -10v -8v -5v -4v 0 0 0 0 -5v -8v -6v -7v t c = 25 c v ds (volts) i d (amperes) i d (amperes) v ds (volts) g fs (siemens) i d (amperes) t c ( c) p d (watts) v ds (volts) i d (amperes) t p (seconds) to-3 p d = 100w t c = 25 c C obsolete C
4 1235 bordeaux drive, sunnyvale, ca 94089 tel: (408) 222-8888 ?fax: (408) 222-4895 www.supertex.com 05/19/03 ?003 supertex inc. all rights reserved. unauthorized use or reproduction prohibited. VP0350 t ypical performance curves gate drive dynamic characteristics on-resistance vs. drain current transfer characteristics capacitance vs. drain-to-source voltage c (picofarads) 0-10-20- 30 -40 800 600 400 200 -50 0 50 100 150 1.2 1.1 1.0 0.9 0.8 0 2.0 1.0 0 -50 0 50 100 150 20 16 12 8 4 -10 -8 -6 -4 -2 v gs = -10v 010 2468 v ds = -40v v ds = -10v 800 pf 500 pf f = 1mhz t a = -55 c t a = 150 c t a = 25 c v ds = -25v 0-10 -2 -4 -6 -8 -5.0 -4.0 -3.0 -2.0 0 1.15 1.1 1.05 1.0 0.95 0.9 0-1.0- 2.0 -3.0 -4.0 -5.0 0 0 v (th) @ -10ma r ds(on) @ -10v, -0.25a 0 -1.0 r ds(on) (ohms) bv dss (normalized) t j ( c) i d (amperes) bv dss variation with temperature v gs = -5v t j ( c) v gs(th) (normalized) v (th) and r ds variation with temperature v gs (volts) i d (amperes) r ds(on) (normalized) q g (nanocoulombs) v gs (volts) v ds (volts) c iss c oss c rss C obsolete C
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